FF200R12KE4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FF200R12KE4
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 45 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
FF200R12KE4 Datasheet (PDF)
ff200r12ke4.pdf

Technische Information / Technical InformationIGBT-ModuleFF200R12KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESColle
ff200r12ke4p.pdf

Technische Information / Technical InformationIGBT-ModulFF200R12KE4PIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary DataV = 1200VC
ff200r12ke3.pdf

Technische Information / Technical InformationIGBT-ModuleFF200R12KE3IGBT-modulesIGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 200 AC vj max C nomContinuous DC collector current T = 25C, T = 150C I 295 A
ff200r12ks4.pdf

Technische Information / Technical InformationIGBT-ModuleFF200R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli
Otros transistores... FD800R33KF2C-K , FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV , FD-DF80R12W1H3_B52 , FF1000R17IE4 , FF1000R17IE4D_B2 , FF200R06YE3 , IRGP4066D , FF200R12KS4 , FF200R12KT3 , FF200R12KT3_E , FF200R12KT4 , FF200R12MT4 , FF200R17KE3 , FF200R17KE4 , FF200R33KF2C .
History: IXGH40N60B2D1 | GT60M303 | IKZ75N65EH5 | SKM400GA124D | CM150DX-24S | 6MBP25VBA120-50 | AUIRG4BC30S-S
History: IXGH40N60B2D1 | GT60M303 | IKZ75N65EH5 | SKM400GA124D | CM150DX-24S | 6MBP25VBA120-50 | AUIRG4BC30S-S



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