FF200R12KS4 Todos los transistores

 

FF200R12KS4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FF200R12KS4

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1400 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 125 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Encapsulados: MODULE

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FF200R12KS4 datasheet

 ..1. Size:630K  infineon
ff200r12ks4.pdf pdf_icon

FF200R12KS4

Technische Information / Technical Information IGBT-Module FF200R12KS4 IGBT-modules 62mm C-Serien Modul mit schnellem IGBT2 f r hochfrequentes Schalten 62mm C-Series module with the fast IGBT2 for high-frequency switching V = 1200V CES I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli

 0.1. Size:467K  infineon
ff200r12ks4p.pdf pdf_icon

FF200R12KS4

FF200R12KS4P 62mm C-Serien Modul mit schnellem IGBT2 f r hochfrequentes Schalten und bereits aufgetragenem Thermal Interface Material 62mm C-Series module with the fast IGBT2 for high-frequency switching and pre-applied Thermal Interface Material V = 1200V CES I = 200A / I = 400A C nom CRM Potentielle Anwendungen Potential Applications Anwendungen f r Resonanz Umrichter Reso

 5.1. Size:425K  infineon
ff200r12ke3.pdf pdf_icon

FF200R12KS4

Technische Information / Technical Information IGBT-Module FF200R12KE3 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 200 A C vj max C nom Continuous DC collector current T = 25 C, T = 150 C I 295 A

 5.2. Size:396K  infineon
ff200r12kt3 e.pdf pdf_icon

FF200R12KS4

Technische Information / Technical Information IGBT-Module FF200R12KT3_E IGBT-modules 62mm C-Serien Modul mit gemeinsamen Emitter 62mm C-series module with common emitter Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor

Otros transistores... FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV , FD-DF80R12W1H3_B52 , FF1000R17IE4 , FF1000R17IE4D_B2 , FF200R06YE3 , FF200R12KE4 , GT30F133 , FF200R12KT3 , FF200R12KT3_E , FF200R12KT4 , FF200R12MT4 , FF200R17KE3 , FF200R17KE4 , FF200R33KF2C , FF225R12ME3 .

History: FD-DF80R12W1H3_B52 | NCE15TD60BT

 

 

 


History: FD-DF80R12W1H3_B52 | NCE15TD60BT

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