FF225R12ME4_B11 Todos los transistores

 

FF225R12ME4_B11 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FF225R12ME4_B11
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1050 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 225 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

FF225R12ME4_B11 Datasheet (PDF)

 0.1. Size:897K  infineon
ff225r12me4 b11.pdf pdf_icon

FF225R12ME4_B11

/ Technical InformationIGBT-FF225R12ME4_B11IGBT-modulesEconoDUAL3 /IGBT4HEpressfitNTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC / Preliminary DataV = 1200VCESI = 225A / I = 450AC no

 3.1. Size:582K  infineon
ff225r12me4p.pdf pdf_icon

FF225R12ME4_B11

FF225R12ME4PEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe

 3.2. Size:694K  infineon
ff225r12me4-b11.pdf pdf_icon

FF225R12ME4_B11

Technische Information / Technical InformationIGBT-ModuleFF225R12ME4_B11IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendunge

 3.3. Size:574K  infineon
ff225r12me4p-b11.pdf pdf_icon

FF225R12ME4_B11

FF225R12ME4P_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTC /TIMEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC /TIMV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives

Otros transistores... FF200R12KT3_E , FF200R12KT4 , FF200R12MT4 , FF200R17KE3 , FF200R17KE4 , FF200R33KF2C , FF225R12ME3 , FF225R12ME4 , MGD623S , FF225R12MS4 , FF225R17ME3 , FF225R17ME4 , FF225R17ME4_B11 , FF300R06KE3 , FF300R06KE3_B2 , FF300R07KE4 , FF300R07ME4_B11 .

History: AFGY100T65SPD | 7MBR25VP120-50 | IXBF50N360 | APT30GT60BRD | SGT30T60SDM1P7 | APTGF50DH60T | STGP19NC60HD

 

 
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