FF225R12ME4_B11 Specs and Replacement
Type Designator: FF225R12ME4_B11
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1050 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 225 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Package: MODULE FF225R12ME4_B11 Substitution - IGBT ⓘ Cross-Reference Search
FF225R12ME4_B11 datasheet
ff225r12me4 b11.pdf
/ Technical Information IGBT- FF225R12ME4_B11 IGBT-modules EconoDUAL 3 / IGBT4 HE pressfit NTC EconoDUAL 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC / Preliminary Data V = 1200V CES I = 225A / I = 450A C no... See More ⇒
ff225r12me4-b11.pdf
Technische Information / Technical Information IGBT-Module FF225R12ME4_B11 IGBT-modules EconoDUAL 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTC EconoDUAL 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC Vorl ufige Daten / Preliminary Data V = 1200V CES I = 225A / I = 450A C nom CRM Typische Anwendunge... See More ⇒
Specs: FF200R12KT3_E, FF200R12KT4, FF200R12MT4, FF200R17KE3, FF200R17KE4, FF200R33KF2C, FF225R12ME3, FF225R12ME4, NGTB75N65FL2, FF225R12MS4, FF225R17ME3, FF225R17ME4, FF225R17ME4_B11, FF300R06KE3, FF300R06KE3_B2, FF300R07KE4, FF300R07ME4_B11
Keywords - FF225R12ME4_B11 transistor spec
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