HGTP5N120CN Todos los transistores

 

HGTP5N120CN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTP5N120CN

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 25

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

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HGTP5N120CN Datasheet (PDF)

1.1. hgtg5n120bnd hgtp5n120bnd.pdf Size:195K _fairchild_semi

HGTP5N120CN
HGTP5N120CN

HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes • 21A, 1200V, TC = 25oC The HGTG5N120BND and HGTP5N120BND are Non- • 1200V Switching SOA Capability Punch Through (NPT) IGBT designs. They are new • Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC members of the MOS gated high v

1.2. hgtp5n120bnd.pdf Size:28K _intersil

HGTP5N120CN
HGTP5N120CN

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes • 21A, 1200V, TC = 25oC The HGTG5N120BN, HGTP5N120BND, and • 1200V Switching SOA Capability HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT • Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 

Otros transistores... HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , IXGP7N60B , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 .

 

 
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