Справочник IGBT. HGTP5N120CN

 

HGTP5N120CN Даташит. Аналоги. Параметры и характеристики.


   Наименование: HGTP5N120CN
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 167 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 25 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 12 nS
   Тип корпуса: TO220AB
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HGTP5N120CN Datasheet (PDF)

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HGTP5N120CN

HGTP5N120CN, HGT1S5N120CNSData Sheet December 200125A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP5N120CN and HGT1S5N120CNS are Non-Punch 25A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150

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HGTP5N120CN

HGTG5N120CND, HGTP5N120CND,HGT1S5N120CNDSData Sheet January 2000 File Number 4598.225A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oCThe HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA CapabilityHGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oCde

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HGTP5N120CN

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

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HGTP5N120CN

HGTP5N120BN, HGT1S5N120BNSData Sheet January 2000 File Number 4599.221A, 1200V, NPT Series N-Channel IGBTs FeaturesThe HGTP5N120BN and the HGT1S5N120BNS are 21A, 1200V, TC = 25oCNon-Punch Through (NPT) IGBT designs. They are new 1200V Switching SOA Capabilitymembers of the MOS gated high voltage switching IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ

Другие IGBT... HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , SGH80N60UFD , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 .

History: 1MBI600V-120-50 | IRG4BC30F | 2SH12 | IXSN35N120AU1 | IXBF20N300 | IRGS4615D | MSG15T120FPE

 

 
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