FF100R12RT4 Todos los transistores

 

FF100R12RT4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FF100R12RT4
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 555 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Paquete / Cubierta: MODULE

 Búsqueda de reemplazo de FF100R12RT4 - IGBT

 

FF100R12RT4 Datasheet (PDF)

 ..1. Size:586K  infineon
ff100r12rt4.pdf

FF100R12RT4
FF100R12RT4

Technische Information / Technical InformationIGBT-ModuleFF100R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrich

 5.1. Size:295K  cn marching-power
mpff100r12rb.pdf

FF100R12RT4
FF100R12RT4

MPFF100R12RB 1200V 100A IGBT IGBT 10s IGBT

 6.1. Size:446K  infineon
ff100r12yt3.pdf

FF100R12RT4
FF100R12RT4

Technische Information / Technical InformationIGBT-ModuleFF100R12YT3IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 AC vj max C nomContinuous DC collector cu

 6.2. Size:627K  infineon
ff100r12ks4.pdf

FF100R12RT4
FF100R12RT4

Technische Information / Technical InformationIGBT-ModuleFF100R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli

 6.3. Size:1294K  cn junshine
kwrff100r12swm.pdf

FF100R12RT4
FF100R12RT4

KWRFF100R12SWM1200V 100A IGBT IGBT100% RBSOA2*ICVCE=2.0V (Eoff=6.28mJ)>10usIGBT()T =25j

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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