FF1200R17KE3_B2 Todos los transistores

 

FF1200R17KE3_B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FF1200R17KE3_B2
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 6600 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 125 ℃
   trⓘ - Tiempo de subida, typ: 200 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

FF1200R17KE3_B2 Datasheet (PDF)

 0.1. Size:614K  infineon
ff1200r17ke3 b2.pdf pdf_icon

FF1200R17KE3_B2

/ Technical InformationIGBT-FF1200R17KE3_B2IGBT-modulesIGBT- / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1700 Vvj CESCollector-emitter voltageDC T = 80C, T = 150C I 1200 AC vj max C n

 2.1. Size:426K  infineon
ff1200r17ke3.pdf pdf_icon

FF1200R17KE3_B2

Technische Information / Technical InformationIGBT-ModuleFF1200R17KE3IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 1200 AC vj max C nomContinuous DC collector

 4.1. Size:731K  infineon
ff1200r17kp4-b2.pdf pdf_icon

FF1200R17KE3_B2

FF1200R17KP4_B2IHM-A /IGBT4IHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 1200A / I = 2400AC nom CRM Potential Applications Medium voltage converters High power converters Tract

 4.2. Size:776K  infineon
ff1200r17kp4 b2.pdf pdf_icon

FF1200R17KE3_B2

Technische Information / Technical InformationIGBT-ModulFF1200R17KP4_B2IGBT-ModuleIHM-A Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 DiodeIHM-A module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 1200A / I = 2400AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Mittelspannu

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