FF1400R17IP4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FF1400R17IP4
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 9550 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1400 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 130 nS
Paquete / Cubierta: MODULE
FF1400R17IP4 Datasheet (PDF)
ff1400r17ip4.pdf
Technische Information / Technical InformationIGBT-ModuleFF1400R17IP4IGBT-modulesPrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCPrimePACK3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 1400A / I = 2800AC nom CRMTypische Anwendungen Typical Applications 3
ff1400r17ip4p.pdf
Technische Information / Technical InformationIGBT-ModulFF1400R17IP4PIGBT-ModulePrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled DiodePrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeV = 1700VCESI = 1400A / I = 2800AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High power converters Mo
ff1400r12ip4.pdf
Technische Information / Technical InformationIGBT-ModuleFF1400R12IP4IGBT-modulesPrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTCPrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 1400A / I = 2800AC nom CRMTypische Anwendungen Typical Applications
ff1400r12ip4p.pdf
Technische Information / Technical InformationIGBT-ModulFF1400R12IP4PIGBT-ModulePrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled DiodePrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeV = 1200VCESI = 1400A / I = 2800AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichter High power converters Mo
Otros transistores... FF300R07ME4_B11 , FF100R12KS4 , FF100R12RT4 , FF100R12YT3 , FF1200R12KE3 , FF1200R17KE3 , FF1200R17KE3_B2 , FF1200R17KP4_B2 , HGTG30N60A4 , FF150R12KE3G , FF150R12KS4 , FF150R12KS4_B2 , FF150R12KT3G , FF150R12ME3G , FF150R12MS4G , FF150R12RT4 , FF150R12YT3 .
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