FF150R12ME3G Todos los transistores

 

FF150R12ME3G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FF150R12ME3G
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 695 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 125 ℃
   trⓘ - Tiempo de subida, typ: 90 nS
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

FF150R12ME3G Datasheet (PDF)

 ..1. Size:493K  infineon
 ff150r12me3g.pdf pdf_icon

FF150R12ME3G

Technische Information / Technical InformationIGBT-ModuleFF150R12ME3GIGBT-modulesEconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-S

 5.1. Size:487K  infineon
 ff150r12ms4g.pdf pdf_icon

FF150R12ME3G

Technische Information / Technical InformationIGBT-ModuleFF150R12MS4GIGBT-modulesEconoDUAL3 Modul mit schnellem IGBT2 fr hochfrequentes Schalten EconoDUAL3 module with fast IGBT2 for high switching frequency Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 120

 6.1. Size:829K  infineon
 ff150r12ks4 b2.pdf pdf_icon

FF150R12ME3G

/ Technical InformationIGBT-FF150R12KS4_B2IGBT-modules62mm C-Series IGBT62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRM Typical Applications High Frequency Switching Application

 6.2. Size:622K  infineon
 ff150r12ks4.pdf pdf_icon

FF150R12ME3G

Technische Information / Technical InformationIGBT-ModuleFF150R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXXP50N60B3 | IXDH30N120AU1 | CT20VML-8

 

 
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