BSM100GB120DN2K Todos los transistores

 

BSM100GB120DN2K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSM100GB120DN2K
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 700 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 1000 pF
   Paquete / Cubierta: MODULE
 

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BSM100GB120DN2K Datasheet (PDF)

 ..1. Size:166K  eupec
bsm100gb120dn2.pdf pdf_icon

BSM100GB120DN2K

BSM 100 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

 0.1. Size:209K  eupec
bsm100gb120dn2k.pdf pdf_icon

BSM100GB120DN2K

BSM 100 GB 120 DN2KIGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage V

 2.1. Size:242K  infineon
bsm100gb120dlc.pdf pdf_icon

BSM100GB120DN2K

Technische Information / technical informationIGBT-ModuleBSM100GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

 2.2. Size:229K  eupec
bsm100gb120dlck.pdf pdf_icon

BSM100GB120DN2K

Technische Information / technical informationIGBT-ModuleBSM100GB120DLCKIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 100 ADC-collector current T = 25C, T = 150C I 205 APeriodischer Kollektor Spitzen

Otros transistores... FF150R12RT4 , FF150R12YT3 , FF150R17KE4 , BSM100GAL120DN2 , BSM100GAR120DN2 , BSM100GB120DLC , BSM100GB120DLCK , BSM100GB120DN2 , FGH40N60UFD , BSM100GB170DLC , BSM100GB170DN2 , BSM100GB60DLC , BSM100GD60DLC , BSM50GAL100D , BSM50GB100D , BSM50GB120DLC , BSM50GB120DN2 .

History: APT75GN120JDQ3 | APT50GN60BG | IXGN200N60B3 | MG50Q6ES50A | VS-GB150TH120N | TIG052TS | SG50N06DS

 

 
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