BSM50GD170DL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSM50GD170DL
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 480 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 100 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
BSM50GD170DL Datasheet (PDF)
bsm50gd170dl.pdf

European Power-Semiconductor andElectronics CompanyMarketing InformationBSM 50 GD 170 DL118.1194.5119121.599.94 x 19.05 = 76.219.05 3.8119 1817 16 151 2 3 4 5 6 7 8 9 10 11 123.81 1.15x1.015.245 x 15.24 =76.2110connections to be made externally21131 592 6 101917153 11748 12201401.07.1998BSM 50 GD 170 DL vorlufige DatenH
bsm50gd120dn2.pdf

BSM 50 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-
bsm50gd120dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM50GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 85 APeriodischer Kollektor Spitzenstrom
bsm50gd120dn2g.pdf

BSM 50 GD 120 DN2GIGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: JNG25T60KS | IXGH10N60A | MGB15N40CL | APT15GP90BDQ1G | 2MBI300NB-060 | STGW35NB60SD | AOTF5B65M1
History: JNG25T60KS | IXGH10N60A | MGB15N40CL | APT15GP90BDQ1G | 2MBI300NB-060 | STGW35NB60SD | AOTF5B65M1



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Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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