SKM50GAL12T4 Todos los transistores

SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 81 A Tj = 175 C Tc =80 C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 65 A Tj = 175 C SKM50GAL12T4 Tc

SKM50GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 81 A Tj = 175 C Tc =80 C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 2 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 65 A Tj = 175 C SKM50GB12T4 Tc =80 C 49 A

SKM50GB063D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 600 V IC Tc =25 C 70 A Tj = 150 C Tc =75 C 51 A ICnom 50 A ICRM ICRM = 2xICnom 100 A VGES -20 ... 20 V VCC = 300 V SEMITRANS 2 tpsc VGE 20 V Tj = 125 C 10 s VCES 600 V Tj -55 ... 150 C Superfast NPT-IGBT Inverse diode Modules IF Tc =25 C 75 A Tc =80 C 45 A SKM50GB0

SEMITRANS Absolute Maximum Ratings Values Superfast NPT-IGBT Symbol Conditions 1) Units Modules VCES 600 V VCGR RGE = 20 k 600 V IC Tcase = 25/75 C 70 / 50 A SKM 50 GD 063 DL ICM Tcase = 25/75 C; tp = 1 ms 140 / 100 A SKM 50 GDL 063 D**) VGES 20 V SKM 50 GH 063 DL ***) Ptot per IGBT, Tcase = 25 C 250 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V

SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 79 A Tj = 175 C Tc =80 C 60 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 15 V Tj = 125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 65 A Tj = 175 C SKM50GB12V Tc =80 C 49 A IFnom 50 A Target Da