All IGBT. SKM50GAL12T4 Datasheet

 

SKM50GAL12T4 IGBT. Datasheet pdf. Equivalent


   Type Designator: SKM50GAL12T4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 81 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 280 nC
   Package: MODULE

 SKM50GAL12T4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM50GAL12T4 Datasheet (PDF)

 ..1. Size:498K  semikron
skm50gal12t4.pdf

SKM50GAL12T4
SKM50GAL12T4

SKM50GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 81 ATj = 175 CTc =80C 62 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GAL12T4Tc

 4.1. Size:758K  semikron
skm50gal123d.pdf

SKM50GAL12T4
SKM50GAL12T4

 8.1. Size:459K  semikron
skm50gb12t4.pdf

SKM50GAL12T4
SKM50GAL12T4

SKM50GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 81 ATj = 175 CTc =80C 62 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GB12T4Tc =80C 49 A

 8.2. Size:463K  semikron
skm50gb063d.pdf

SKM50GAL12T4
SKM50GAL12T4

SKM50GB063DAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 600 VIC Tc =25C 70 ATj = 150 CTc =75C 51 AICnom 50 AICRM ICRM = 2xICnom 100 AVGES -20 ... 20 VVCC = 300 VSEMITRANS 2tpsc VGE 20 V Tj = 125 C 10 sVCES 600 VTj -55 ... 150 CSuperfast NPT-IGBT Inverse diodeModulesIF Tc =25C 75 ATc =80C 45 ASKM50GB0

 8.3. Size:201K  semikron
skm50gd063dl skm50gdl063dl skm50gh063dl.pdf

SKM50GAL12T4
SKM50GAL12T4

SEMITRANS Absolute Maximum RatingsValuesSuperfast NPT-IGBT Symbol Conditions 1)UnitsModulesVCES 600 VVCGR RGE = 20 k 600 VIC Tcase = 25/75 C 70 / 50 ASKM 50 GD 063 DLICM Tcase = 25/75 C; tp = 1 ms 140 / 100 ASKM 50 GDL 063 D**)VGES 20 VSKM 50 GH 063 DL ***)Ptot per IGBT, Tcase = 25 C 250 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 V

 8.4. Size:758K  semikron
skm50gb123d.pdf

SKM50GAL12T4
SKM50GAL12T4

 8.5. Size:382K  semikron
skm50gb12v.pdf

SKM50GAL12T4
SKM50GAL12T4

SKM50GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 79 ATj = 175 CTc =80C 60 AICnom 50 AICRM ICRM = 3xICnom 150 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 15 V Tj = 125 C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 65 ATj = 175 CSKM50GB12VTc =80C 49 AIFnom 50 ATarget Da

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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