HGTP7N60A4D Todos los transistores

 

HGTP7N60A4D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGTP7N60A4D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 34 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

HGTP7N60A4D Datasheet (PDF)

 ..1. Size:537K  onsemi
 hgtg7n60a4d hgtp7n60a4d hgt1s7n60a4ds.pdf pdf_icon

HGTP7N60A4D

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG7N60A4D,www.onsemi.comHGTP7N60A4D,HGT1S7N60A4DSThe HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DSare MOS gated high voltage switching devices combining the bestfeatures of MOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conductionloss of a bipolar

 4.1. Size:531K  1
 hgtd7n60a4s hgtg7n60a4 hgtp7n60a4.pdf pdf_icon

HGTP7N60A4D

 4.2. Size:173K  fairchild semi
 hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf pdf_icon

HGTP7N60A4D

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

 4.3. Size:242K  onsemi
 hgt1s7n60a4s9a hgtg7n60a4 hgtp7n60a4.pdf pdf_icon

HGTP7N60A4D

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

MOSTRAR MÁS

Otros transistores... HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , CRG60T60AK3HD , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRG4BC10S , IRG4BC10SD .

History: IXGR40N60CD1 | NCE40TD120BT | IGZ50N65H5 | IXGP30N60C3D4 | MMG150CE065PD6TC | IRG4MC40U | VS-GB400AH120N

 

 
Back to Top

 


 
.