Справочник IGBT. HGTP7N60A4D

 

HGTP7N60A4D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HGTP7N60A4D
   Тип транзистора: IGBT + Diode
   Маркировка: G7N60A4D
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 34 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7(typ) V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 11 nS
   Qgⓘ - Общий заряд затвора, typ: 37 nC
   Тип корпуса: TO220AB

 Аналог (замена) для HGTP7N60A4D

 

 

HGTP7N60A4D Datasheet (PDF)

 ..1. Size:537K  onsemi
 hgtg7n60a4d hgtp7n60a4d hgt1s7n60a4ds.pdf

HGTP7N60A4D HGTP7N60A4D

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG7N60A4D,www.onsemi.comHGTP7N60A4D,HGT1S7N60A4DSThe HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DSare MOS gated high voltage switching devices combining the bestfeatures of MOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conductionloss of a bipolar

 4.1. Size:531K  1
 hgtd7n60a4s hgtg7n60a4 hgtp7n60a4.pdf

HGTP7N60A4D HGTP7N60A4D

 4.2. Size:173K  fairchild semi
 hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf

HGTP7N60A4D HGTP7N60A4D

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

 4.3. Size:242K  onsemi
 hgt1s7n60a4s9a hgtg7n60a4 hgtp7n60a4.pdf

HGTP7N60A4D HGTP7N60A4D

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

Другие IGBT... HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , JT075N065WED , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRG4BC10S , IRG4BC10SD .

 

 
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