SII100N06 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SII100N06 datasheet

..1. Size:1098K sirectifier
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SII100N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 130(100) TC= 25(70)oC A ICRM 200 TC= 70oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 445 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 100 A IFRM 200 tP =1ms A 2 VR

7.1. Size:720K sirectifier
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SII100N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units 1200 VCES V IC 145(100) TC= 25(80)oC A ICRM 290(200) TC= 25(80)oC, tP =1ms A _ VGES +20 V Ptot 700 W o _ _ TVj,(Tstg) TOPERATION

8.1. Size:480K powersem
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8.2. Size:459K powersem
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IGBT Module PSII 100/06* IC80 = 80 A VCES = 600 V VCE(sat)typ.= 2.3 V Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet S15 ECO-TOPTM 1 R15 A15 G15 N15 A7 V12 V9 A9 V13 V10 D1 K1 Q1 A1 N1 G1 U1 V1 typical picture, for pin V3 V6 configuration see outline drawing IGBTs Symbol Conditions Maximum Ratings *NTC optional VCES TVJ = 25 C to 150 C 600 V

Otros transistores... SKM50GB12T4 , SKM50GB12V , SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , SKM600GB066D , SKM600GB126D , MBQ50T65FDSC , SII100N12 , SII150N06 , SII150N12 , SII200N06 , SII200N12 , SII300N06 , SII50N06 , SII75N06 .