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SII100N06 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SII100N06
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 445 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   Tjⓘ - Temperatura máxima de unión: 125 ℃
   trⓘ - Tiempo de subida, typ: 10 nS
   Paquete / Cubierta: MODULE
 

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SII100N06 Datasheet (PDF)

 ..1. Size:1098K  sirectifier
sii100n06.pdf pdf_icon

SII100N06

SII100N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 130(100) TC= 25(70)oC AICRM 200 TC= 70oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 445 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 100 AIFRM200 tP =1ms A2VR

 7.1. Size:720K  sirectifier
sii100n12.pdf pdf_icon

SII100N06

SII100N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 145(100) TC= 25(80)oC AICRM 290(200) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 700 Wo_ _TVj,(Tstg) TOPERATION

 8.1. Size:480K  powersem
psii100-12.pdf pdf_icon

SII100N06

IGBT Module IC80 = 90 APSII 100/12*VCES = 1200 VShort Circuit SOA CapabilitySquare RBSOAVCE(sat)typ. = 2.8 VPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13 V10D1K1 Q1A1G1 N1U1V1typical picture, for pinV3 V6configuration see outlineIGBTsdrawing*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 1200 V

 8.2. Size:459K  powersem
psii100-06.pdf pdf_icon

SII100N06

IGBT Module PSII 100/06* IC80 = 80 AVCES = 600 VVCE(sat)typ.= 2.3 VShort Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13V10D1K1 Q1A1N1G1U1V1typical picture, for pinV3 V6configuration see outlinedrawingIGBTsSymbol Conditions Maximum Ratings*NTC optionalVCES TVJ = 25C to 150C 600 V

Otros transistores... SKM50GB12T4 , SKM50GB12V , SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , SKM600GB066D , SKM600GB126D , IHW20N120R3 , SII100N12 , SII150N06 , SII150N12 , SII200N06 , SII200N12 , SII300N06 , SII50N06 , SII75N06 .

History: AOK20B65M1 | BSM75GB60DLC | SKM75GB12V | MG12100S-BN2MM | 50MT060ULSTAPBF | APTGT200U120D4 | APT150GN60J

 

 
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