SII100N06 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SII100N06
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 445 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 125 ℃
trⓘ - Tiempo de subida, typ: 10 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de SII100N06 - IGBT
SII100N06 Datasheet (PDF)
sii100n06.pdf
SII100N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 130(100) TC= 25(70)oC AICRM 200 TC= 70oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 445 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 100 AIFRM200 tP =1ms A2VR
sii100n12.pdf
SII100N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 145(100) TC= 25(80)oC AICRM 290(200) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 700 Wo_ _TVj,(Tstg) TOPERATION
psii100-12.pdf
IGBT Module IC80 = 90 APSII 100/12*VCES = 1200 VShort Circuit SOA CapabilitySquare RBSOAVCE(sat)typ. = 2.8 VPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13 V10D1K1 Q1A1G1 N1U1V1typical picture, for pinV3 V6configuration see outlineIGBTsdrawing*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 1200 V
psii100-06.pdf
IGBT Module PSII 100/06* IC80 = 80 AVCES = 600 VVCE(sat)typ.= 2.3 VShort Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13V10D1K1 Q1A1N1G1U1V1typical picture, for pinV3 V6configuration see outlinedrawingIGBTsSymbol Conditions Maximum Ratings*NTC optionalVCES TVJ = 25C to 150C 600 V
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2