SII100N06 Datasheet and Replacement
Type Designator: SII100N06
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 445 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 130 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 10 nS
Package: MODULE
SII100N06 substitution
SII100N06 Datasheet (PDF)
sii100n06.pdf

SII100N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 130(100) TC= 25(70)oC AICRM 200 TC= 70oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 445 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 100 AIFRM200 tP =1ms A2VR
sii100n12.pdf

SII100N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 145(100) TC= 25(80)oC AICRM 290(200) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 700 Wo_ _TVj,(Tstg) TOPERATION
psii100-12.pdf

IGBT Module IC80 = 90 APSII 100/12*VCES = 1200 VShort Circuit SOA CapabilitySquare RBSOAVCE(sat)typ. = 2.8 VPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13 V10D1K1 Q1A1G1 N1U1V1typical picture, for pinV3 V6configuration see outlineIGBTsdrawing*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 1200 V
psii100-06.pdf

IGBT Module PSII 100/06* IC80 = 80 AVCES = 600 VVCE(sat)typ.= 2.3 VShort Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13V10D1K1 Q1A1N1G1U1V1typical picture, for pinV3 V6configuration see outlinedrawingIGBTsSymbol Conditions Maximum Ratings*NTC optionalVCES TVJ = 25C to 150C 600 V
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MG25Q6ES51 | 1MBI800UG-330
Keywords - SII100N06 transistor datasheet
SII100N06 cross reference
SII100N06 equivalent finder
SII100N06 lookup
SII100N06 substitution
SII100N06 replacement
History: MG25Q6ES51 | 1MBI800UG-330



LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc373 | a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328 | 2sc1845 transistor | a933 transistor datasheet | a1633 transistor