SII100N12 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SII100N12 Datasheet (PDF)

..1. Size:720K sirectifier
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SII100N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 145(100) TC= 25(80)oC AICRM 290(200) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 700 Wo_ _TVj,(Tstg) TOPERATION

7.1. Size:1098K sirectifier
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SII100N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 130(100) TC= 25(70)oC AICRM 200 TC= 70oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 445 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 100 AIFRM200 tP =1ms A2VR

8.1. Size:480K powersem
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IGBT Module IC80 = 90 APSII 100/12*VCES = 1200 VShort Circuit SOA CapabilitySquare RBSOAVCE(sat)typ. = 2.8 VPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13 V10D1K1 Q1A1G1 N1U1V1typical picture, for pinV3 V6configuration see outlineIGBTsdrawing*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 1200 V

8.2. Size:459K powersem
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IGBT Module PSII 100/06* IC80 = 80 AVCES = 600 VVCE(sat)typ.= 2.3 VShort Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13V10D1K1 Q1A1N1G1U1V1typical picture, for pinV3 V6configuration see outlinedrawingIGBTsSymbol Conditions Maximum Ratings*NTC optionalVCES TVJ = 25C to 150C 600 V

Otros transistores... SKM50GB12V , SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 , FGH60N60SFD , SII150N06 , SII150N12 , SII200N06 , SII200N12 , SII300N06 , SII50N06 , SII75N06 , SII75N12 .