SII75N12 Todos los transistores

SII75N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units 1200 VCES V IC 105(75) TC= 25(80)oC A ICRM 210(150) TC= 25(80)oC, tP =1ms A _ VGES +20 V Ptot 625 W o _ _ TVj,(Tstg) TOPERATION

SII75N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 100(75) TC= 25(75)oC A ICRM 150 TC= 75oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 355 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 75 A IFRM 150 tP =1ms A 2 VR=0V

IGBT Module IC80 = 60 A VCES = 1200 V PSII 75/12* Preliminary Data Sheet VCE(sat)typ. = 2.7 V S15 R15 ECO-TOPTM 1 A15 G15 N15 A7 V12 V9 A9 V13 V10 D1 K1 Q1 A1 N1 G1 U1 V1 V3 V6 typical picture, for pin IGBTs configuration see outline drawing Symbol Conditions Maximum Ratings VCES TVJ = 25 C to 150 C 1200 V *NTC optional VGES 20 V IC25 TC = 25 C 90 A IC80 TC