All IGBT. SII75N12 Datasheet

 

SII75N12 IGBT. Datasheet pdf. Equivalent


   Type Designator: SII75N12
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 800 pF
   Package: MODULE

 SII75N12 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SII75N12 Datasheet (PDF)

 ..1. Size:722K  sirectifier
 sii75n12.pdf

SII75N12 SII75N12

SII75N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 105(75) TC= 25(80)oC AICRM 210(150) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 625 Wo_ _TVj,(Tstg) TOPERATION

 8.1. Size:1226K  sirectifier
 sii75n06.pdf

SII75N12 SII75N12

SII75N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 100(75) TC= 25(75)oC AICRM 150 TC= 75oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 355 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 75 AIFRM150 tP =1ms A2VR=0V

 9.1. Size:494K  powersem
 psii75-12.pdf

SII75N12 SII75N12

IGBT Module IC80 = 60 AVCES = 1200 VPSII 75/12*Preliminary Data SheetVCE(sat)typ. = 2.7 VS15R15ECO-TOPTM 1A15 G15N15A7 V12V9A9 V13 V10D1K1 Q1A1N1G1U1V1V3 V6typical picture, for pinIGBTsconfiguration see outlinedrawingSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 1200 V*NTC optionalVGES 20 VIC25 TC = 25C 90 AIC80 TC

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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