MMIX1G120N120A3V1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMIX1G120N120A3V1 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 220 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 67 nS
Coesⓘ - Capacitancia de salida, typ: 655 pF
Encapsulados: PLASTIC-24PIN
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MMIX1G120N120A3V1 datasheet
mmix1g120n120a3v1.pdf
Advance Technical Information GenX3TM 1200V VCES = 1200V MMIX1G120N120A3V1 IGBT w/ Diode IC110 = 105A VCE(sat) 2.2V (Electrically Isolated Tab) C Ultra-Low-Vsat PT IGBT for 3kHz Switching G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V Isolated Tab VGES Continuous 20 V C VGEM Tr
mmix1g75n250.pdf
Advance Technical Information High Voltage IGBT VCES = 2500V MMIX1G75N250 IC90 = 65A For Capacitor Discharge VCE(sat) 2.9V Applications ( Electrically Isolated Tab) C G Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V E VCES TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V Isolated Tab VGEM Transient 30 V C IC25
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Advance Technical Information GenX3TM 600V VCES = 600V MMIX1G320N60B3 IC25 = 400A IGBT VCE(sat) 1.50V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V Isolated Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V C VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 4
Otros transistores... SII200N06, SII200N12, SII300N06, SII50N06, SII75N06, SII75N12, MMIX1B15N300C, MMIX1B20N300C, FGPF4633, MMIX1X200N60B3, MMIX1X200N60B3H1, MMIX1X340N65B4, MMIX1Y100N120C3H1, MMIX1Y82N120C3H1, MMIX2S50N60B4D1, MMIX4B22N300, SIGC03T60E
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