MMIX1G120N120A3V1 Todos los transistores

 

MMIX1G120N120A3V1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMIX1G120N120A3V1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 220 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 67 nS
   Coesⓘ - Capacitancia de salida, typ: 655 pF
   Paquete / Cubierta: PLASTIC-24PIN

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MMIX1G120N120A3V1 Datasheet (PDF)

 0.1. Size:246K  ixys
mmix1g120n120a3v1.pdf

MMIX1G120N120A3V1
MMIX1G120N120A3V1

Advance Technical InformationGenX3TM 1200V VCES = 1200VMMIX1G120N120A3V1IGBT w/ DiodeIC110 = 105AVCE(sat) 2.2V(Electrically Isolated Tab)CUltra-Low-Vsat PT IGBT for3kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 V Isolated TabVGES Continuous 20 VCVGEM Tr

 8.1. Size:225K  ixys
mmix1g75n250.pdf

MMIX1G120N120A3V1
MMIX1G120N120A3V1

Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX1G75N250IC90 = 65AFor Capacitor Discharge VCE(sat) 2.9VApplications( Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VEVCES TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 V Isolated TabVGEM Transient 30 VCIC25

 8.2. Size:243K  ixys
mmix1g320n60b3.pdf

MMIX1G120N120A3V1
MMIX1G120N120A3V1

Advance Technical InformationGenX3TM 600V VCES = 600VMMIX1G320N60B3IC25 = 400AIGBTVCE(sat) 1.50VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingCGESymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V Isolated TabVCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 4

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