MMIX1G120N120A3V1 Todos los transistores

 

MMIX1G120N120A3V1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMIX1G120N120A3V1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 220 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 67 nS
   Coesⓘ - Capacitancia de salida, typ: 655 pF
   Qgⓘ - Carga total de la puerta, typ: 420 nC
   Paquete / Cubierta: PLASTIC-24PIN
     - Selección de transistores por parámetros

 

MMIX1G120N120A3V1 Datasheet (PDF)

 0.1. Size:246K  ixys
 mmix1g120n120a3v1.pdf pdf_icon

MMIX1G120N120A3V1

Advance Technical InformationGenX3TM 1200V VCES = 1200VMMIX1G120N120A3V1IGBT w/ DiodeIC110 = 105AVCE(sat) 2.2V(Electrically Isolated Tab)CUltra-Low-Vsat PT IGBT for3kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 V Isolated TabVGES Continuous 20 VCVGEM Tr

 8.1. Size:225K  ixys
 mmix1g75n250.pdf pdf_icon

MMIX1G120N120A3V1

Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX1G75N250IC90 = 65AFor Capacitor Discharge VCE(sat) 2.9VApplications( Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VEVCES TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 V Isolated TabVGEM Transient 30 VCIC25

 8.2. Size:243K  ixys
 mmix1g320n60b3.pdf pdf_icon

MMIX1G120N120A3V1

Advance Technical InformationGenX3TM 600V VCES = 600VMMIX1G320N60B3IC25 = 400AIGBTVCE(sat) 1.50VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingCGESymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V Isolated TabVCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 4

MOSTRAR MÁS

Otros transistores... SII200N06 , SII200N12 , SII300N06 , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , TGAN60N60F2DS , MMIX1X200N60B3 , MMIX1X200N60B3H1 , MMIX1X340N65B4 , MMIX1Y100N120C3H1 , MMIX1Y82N120C3H1 , MMIX2S50N60B4D1 , MMIX4B22N300 , SIGC03T60E .

 

 
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