SIGC03T60E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SIGC03T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag

SIGC03T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A3000-SIGC03T60SNC 600V 2A 1.78 x 1.78 mm2 sawn on foil A002 ME

SIGC03T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS

SIGC04T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag

SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pac

SIGC06T120CS IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology 180m chip SGP02N120 short circuit prove positive temperature coefficient Applications: G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4115-SIGC06T120CS 1200V 2A 2.45 x 2.25

SIGC08T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC08T65E 650

SIGC06T60 IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pack

SIGC06T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS

SIGC07T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SKB06N60HS 600V NPT technology 100m chip GApplications: short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4220-SIGC07T60UN 60

SIGC08T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS

SIGC06T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC06T65E 650

SIGC07T60SNC IGBT Chip in NPT-technology CFEATURES: 600V NPT technology This chip is used for: 100m chip DuoPack SKP06N60 short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4672-SIGC07T60SNC 600V 6A 2.6 x 2.6 mm2 sawn on foil A003 Q6

SIGC08T60 IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pack

SIGC04T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packa

SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drives G easy paralleling white goods E resonant applications Chip Type VCE ICn Die Size Pa

SIGC06T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageSI

SIGC05T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip DuoPack SGP04N60 short circuit prove positive temperature coefficient GApplications: E easy paralleling drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4149-SIGC05T60SNC 600V 4A 2.29 x 2.29 mm2 sawn on foil A101

SIGC08T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS

SIGC04T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods E easy paralleling resonant applications Chip Type VCE IC Die Size Packag

SIGC08T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageSI

SIGC04T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC04T65E 650

SIGC06T60GE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size PackageS

SIGC04T60GSE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G white goods easy paralleling E resonant applicationsChip Type VCE IC Die Size Package

SIGC07T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT-Modules positive temperature coefficient easy paralleling GApplications: E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4134-SIGC07T60NC 600V 6A 2.6 x 2.6 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Ra