Справочник IGBT. SIGC03T60E

 

SIGC03T60E - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: SIGC03T60E

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.9

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 4

Максимальная температура перехода (Tj): 150

Емкость коллектора (Cc), pf: 29

Корпус: CHIP

Аналог (замена) для SIGC03T60E

 

 

SIGC03T60E Datasheet (PDF)

1.1. sigc03t60snc.pdf Size:75K _igbt

SIGC03T60E
SIGC03T60E

SIGC03T60SNC IGBT Chip in NPT-technology C FEATURES: This chip is used for: • 600V NPT technology • 100µm chip • IGBT Modules • short circuit prove • positive temperature coefficient G Applications: E • easy paralleling • drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A3000- SIGC03T60SNC 600V 2A 1.78 x 1.78 mm2 sawn on foil A002 ME

1.2. sigc03t60se.pdf Size:117K _igbt

SIGC03T60E
SIGC03T60E

 SIGC03T60SE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods • easy paralleling E • resonant applications Chip Type VCE IC Die Size Package S

 1.3. sigc03t60e.pdf Size:57K _igbt

SIGC03T60E
SIGC03T60E

 SIGC03T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

1.4. sigc03t60snc.pdf Size:75K _infineon

SIGC03T60E
SIGC03T60E

SIGC03T60SNC IGBT Chip in NPT-technology C FEATURES: This chip is used for: • 600V NPT technology • 100µm chip • IGBT Modules • short circuit prove • positive temperature coefficient G Applications: E • easy paralleling • drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A3000- SIGC03T60SNC 600V 2A 1.78 x 1.78 mm2 sawn on foil A002 ME

 1.5. sigc03t60se.pdf Size:117K _infineon

SIGC03T60E
SIGC03T60E

 SIGC03T60SE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods • easy paralleling E • resonant applications Chip Type VCE IC Die Size Package S

1.6. sigc03t60e.pdf Size:57K _infineon

SIGC03T60E
SIGC03T60E

 SIGC03T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

Другие IGBT... MMIX1G120N120A3V1 , MMIX1X200N60B3 , MMIX1X200N60B3H1 , MMIX1X340N65B4 , MMIX1Y100N120C3H1 , MMIX1Y82N120C3H1 , MMIX2S50N60B4D1 , MMIX4B22N300 , G30N60C3D , SIGC03T60SE , SIGC03T60SNC , SIGC04T60 , SIGC04T60E , SIGC04T60G , SIGC04T60GE , SIGC04T60GS , SIGC04T60GSE .

 

 
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