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SIGC04T60GSE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIGC04T60GSE

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.05

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 6

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 28

Empaquetado / Estuche: CHIP

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SIGC04T60GSE Datasheet (PDF)

1.1. sigc04t60gse.pdf Size:118K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60GSE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods • easy paralleling E • resonant applications Chip Type VCE IC Die Size Package

1.2. sigc04t60ge.pdf Size:58K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60GE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packa

 1.3. sigc04t60.pdf Size:56K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

1.4. sigc04t60e.pdf Size:56K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

 1.5. sigc04t60gs.pdf Size:72K _igbt

SIGC04T60GSE
SIGC04T60GSE

SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pa

1.6. sigc04t60g.pdf Size:76K _igbt

SIGC04T60GSE
SIGC04T60GSE

SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pac

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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