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SIGC04T60GSE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIGC04T60GSE

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.05

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 6

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 28

Empaquetado / Estuche: CHIP

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SIGC04T60GSE Datasheet (PDF)

1.1. sigc04t60.pdf Size:56K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

1.2. sigc04t60ge.pdf Size:58K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60GE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packa

 1.3. sigc04t60g.pdf Size:76K _igbt

SIGC04T60GSE
SIGC04T60GSE

SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pac

1.4. sigc04t60gse.pdf Size:118K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60GSE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods • easy paralleling E • resonant applications Chip Type VCE IC Die Size Package

 1.5. sigc04t60e.pdf Size:56K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

1.6. sigc04t60gs.pdf Size:72K _igbt

SIGC04T60GSE
SIGC04T60GSE

SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pa

Otros transistores... SIGC03T60E , SIGC03T60SE , SIGC03T60SNC , SIGC04T60 , SIGC04T60E , SIGC04T60G , SIGC04T60GE , SIGC04T60GS , 10N40C1D , SIGC04T65E , SIGC05T60SNC , IGC70T120T6RL , IRGC100B120KB , IRGC100B120UB , IRGC100B60KB , IRGC100B60UB , IRGC15B120KB .

 

 
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