All IGBT. SIGC04T60GSE Datasheet

 

SIGC04T60GSE IGBT. Datasheet pdf. Equivalent

Type Designator: SIGC04T60GSE

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.05

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 6

Maximum Junction Temperature (Tj), °C: 150

Maximum Collector Capacity (Cc), pF: 28

Package: CHIP

SIGC04T60GSE Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SIGC04T60GSE Datasheet (PDF)

1.1. sigc04t60gse.pdf Size:118K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60GSE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods • easy paralleling E • resonant applications Chip Type VCE IC Die Size Package

1.2. sigc04t60ge.pdf Size:58K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60GE IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packa

 1.3. sigc04t60.pdf Size:56K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

1.4. sigc04t60e.pdf Size:56K _igbt

SIGC04T60GSE
SIGC04T60GSE

 SIGC04T60E IGBT3 Chip Features: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses Applications: • short tail current • drives • positive temperature coefficient G • white goods E • easy paralleling • resonant applications Chip Type VCE IC Die Size Packag

 1.5. sigc04t60gs.pdf Size:72K _igbt

SIGC04T60GSE
SIGC04T60GSE

SIGC04T60GS IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pa

1.6. sigc04t60g.pdf Size:76K _igbt

SIGC04T60GSE
SIGC04T60GSE

SIGC04T60G IGBT3 Chip FEATURES: This chip is used for: • 600V Trench & Field Stop technology C • power module • low VCE(sat) • discrete components • low turn-off losses • short tail current Applications: • positive temperature coefficient • drives G • easy paralleling • white goods E • resonant applications Chip Type VCE ICn Die Size Pac

Datasheet: TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , G12N60C3D , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W .

 
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