IRGC15B120KB Todos los transistores

 

IRGC15B120KB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGC15B120KB

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.3

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 15

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: CHIP

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IRGC15B120KB Datasheet (PDF)

1.1. irgc15b120kb.pdf Size:26K _international_rectifier

IRGC15B120KB

PD - 93866A IRGC15B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)=15A Low VCE(on) VCE(on) typ.=2.46V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor

1.2. irgc15b120ub.pdf Size:28K _international_rectifier

IRGC15B120KB

PD - 93865A IRGC15B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)=15A UltraFast VCE(on) typ.=3.67V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Efficiency above 20KHz E

 1.3. irgc15b120kb.pdf Size:25K _igbt_a

IRGC15B120KB

PD - 93866A IRGC15B120KB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • Low VCE(on) VCE(on) typ.=2.46V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Eff

1.4. irgc15b120ub.pdf Size:28K _igbt_a

IRGC15B120KB

查询IRGC15B120UB供应商 PD - 93865A IRGC15B120UB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • UltraFast VCE(on) typ.=3.67V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Ra

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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