IRGC15B120KB
Даташит. Аналоги. Параметры и характеристики.
Наименование: IRGC15B120KB
Тип транзистора: IGBT
Тип управляющего канала: N
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 1200
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
15
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
2.3
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6
V
Тип корпуса:
CHIP
- подбор IGBT транзистора по параметрам
IRGC15B120KB
Datasheet (PDF)
..1. Size:25K international rectifier
irgc15b120kb.pdf 
PD - 93866AIRGC15B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A Low VCE(on)VCE(on) typ.=2.46V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Eff
4.1. Size:28K international rectifier
irgc15b120ub.pdf 
IRGC15B120UBPD - 93865AIRGC15B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A UltraFastVCE(on) typ.=3.67V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Ra
7.1. Size:15K international rectifier
irgc15b60kb.pdf 
PD - 94410IRGC15B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 15A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Effici
9.1. Size:15K international rectifier
irgc100b120k.pdf 
PD - 93874IRGC100B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark E
9.2. Size:44K international rectifier
irgc16b120kb.pdf 
PD - 94562IRGC16B120KBDie in Wafer FormFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A Low VCE(on)VCE(on) typ.=2.55V@ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE1
9.3. Size:79K international rectifier
irgc100b60kb.pdf 
PD - 94618AIRGC100B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ.=1.9V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE
9.5. Size:34K international rectifier
irgc100b60ub.pdf 
PD - 94716IRGC100B60UBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ. = 2.8V 10s Short Circuit Capability Square RBSOA @ IC(nom) @ 25C Positive VCE(on) Temperature CoefficientUPS IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for UPS and Welding ApplicationsE150mm Waf
9.6. Size:94K international rectifier
irgc100b120ub.pdf 
PD - 93873BIRGC100B120UBDie in Wafer Form1200VFeaturesC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBTGBenefitsShort Circuit RatedE Benchmark Efficiency above 20KHz150mm Wafer
9.7. Size:45K international rectifier
irgc16b60kb.pdf 
PD - 94657IRGC16B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 15A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE1
9.8. Size:15K international rectifier
irgc10b60kb.pdf 
PD - 94409IRGC10B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 10A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Effici
9.9. Size:15K international rectifier
irgc100b120u.pdf 
PD - 93873IRGC100B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Effic
9.10. Size:17K international rectifier
irgc14c40lb.pdf 
PD - 94060IRGC14C40LBIgnition IGBTIRGC14C40LCIRGC14C40LDDie in Wafer FormIGBT with on-chip Gate-Emitter and Gate-Collector clampsFeaturesNOTES: 1) Part number IRGC14C40LB are die in wafer formprobed and uncut; IRGC14C40LC are die on film probed andMost Rugged in Industrycut; and IRGC14C40LD are probed die in wafle pack. 2) Refer-Logic-Level Gate Driveence package
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, SIGC04T65E
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, IRGC100B120UB
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, IRGC16B120KB
, IRGC16B60KB
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.
History: KDG25R12KE3
| IRGS4056D
| OST20N135HRF
