IRGC16B60KB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94657IRGC16B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 15A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE1

PD - 94562IRGC16B120KBDie in Wafer FormFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A Low VCE(on)VCE(on) typ.=2.55V@ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE1

PD - 94410IRGC15B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 15A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Effici

PD - 93874IRGC100B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark E

PD - 94618AIRGC100B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ.=1.9V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE

PD - 94716IRGC100B60UBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ. = 2.8V 10s Short Circuit Capability Square RBSOA @ IC(nom) @ 25C Positive VCE(on) Temperature CoefficientUPS IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for UPS and Welding ApplicationsE150mm Waf

PD - 93866AIRGC15B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A Low VCE(on)VCE(on) typ.=2.46V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Eff

PD - 93873BIRGC100B120UBDie in Wafer Form1200VFeaturesC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBTGBenefitsShort Circuit RatedE Benchmark Efficiency above 20KHz150mm Wafer

IRGC15B120UBPD - 93865AIRGC15B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A UltraFastVCE(on) typ.=3.67V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Ra

PD - 94409IRGC10B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 10A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Effici

PD - 93873IRGC100B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Effic

PD - 94060IRGC14C40LBIgnition IGBTIRGC14C40LCIRGC14C40LDDie in Wafer FormIGBT with on-chip Gate-Emitter and Gate-Collector clampsFeaturesNOTES: 1) Part number IRGC14C40LB are die in wafer formprobed and uncut; IRGC14C40LC are die on film probed andMost Rugged in Industrycut; and IRGC14C40LD are probed die in wafle pack. 2) Refer-Logic-Level Gate Driveence package