All IGBT. IRGC16B60KB Datasheet

 

IRGC16B60KB IGBT. Datasheet pdf. Equivalent

Type Designator: IRGC16B60KB

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.35

Maximum Collector Current |Ic|, A: 15

Package: CHIP

IRGC16B60KB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

 

IRGC16B60KB Datasheet (PDF)

1.1. irgc16b60kb.pdf Size:45K _igbt_a

IRGC16B60KB

PD - 94657 IRGC16B60KB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 15A • Low VCE(on) VCE(on) typ.=1.8V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Control Applications E 1

3.1. irgc16b120kb.pdf Size:44K _igbt_a

IRGC16B60KB

PD - 94562 IRGC16B120KB Die in Wafer Form Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • Low VCE(on) VCE(on) typ.=2.55V@ • 10µs Short Circuit Capability IC(nom) @ 25°C • Square RBSOA • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Control Applications E 1

 5.1. irgc10b60kb.pdf Size:15K _international_rectifier

IRGC16B60KB

PD - 94409 IRGC10B60KB Die in Wafer Form Features Features Features Features Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 10A • Low VCE(on) VCE(on) typ.=1.8V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Co

5.2. irgc100b120k.pdf Size:15K _international_rectifier

IRGC16B60KB

PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A • Low VCE(on) VCE(on) typ.= 2.2V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Mot

 5.3. irgc15b60kb.pdf Size:15K _international_rectifier

IRGC16B60KB

PD - 94410 IRGC15B60KB Die in Wafer Form Features Features Features Features Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 15A • Low VCE(on) VCE(on) typ.=1.8V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Co

5.4. irgc100b120u.pdf Size:15K _international_rectifier

IRGC16B60KB

PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A • Low VCE(on) VCE(on) typ.= 3.1V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor C

 5.5. irgc100b120kb.pdf Size:43K _international_rectifier

IRGC16B60KB

5.6. irgc14c40lb.pdf Size:17K _international_rectifier

IRGC16B60KB

PD - 94060 IRGC14C40LB Ignition IGBT IRGC14C40LC IRGC14C40LD Die in Wafer Form IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features NOTES: 1) Part number IRGC14C40LB are die in wafer form probed and uncut; IRGC14C40LC are die on film probed and •Most Rugged in Industry cut; and IRGC14C40LD are probed die in wafle pack. 2) Refer- •Logic-Level Gate Drive ence packaged parts

5.7. irgc15b120kb.pdf Size:26K _international_rectifier

IRGC16B60KB

PD - 93866A IRGC15B120KB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • Low VCE(on) VCE(on) typ.=2.46V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor

5.8. irgc15b120ub.pdf Size:28K _international_rectifier

IRGC16B60KB

PD - 93865A IRGC15B120UB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • UltraFast VCE(on) typ.=3.67V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated • Benchmark Efficiency above 20KHz E

5.9. irgc100b120ub.pdf Size:43K _international_rectifier

IRGC16B60KB

5.10. irgc100b60ub.pdf Size:34K _igbt_a

IRGC16B60KB

PD - 94716 IRGC100B60UB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=100A • Low VCE(on) VCE(on) typ. = 2.8V • 10µs Short Circuit Capability • Square RBSOA @ IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UPS IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for UPS and Welding Applications E 150mm Waf

5.11. irgc100b60kb.pdf Size:79K _igbt_a

IRGC16B60KB

PD - 94618A IRGC100B60KB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=100A • Low VCE(on) VCE(on) typ.=1.9V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Control Applications E

5.12. irgc100b120kb.pdf Size:43K _igbt_a

IRGC16B60KB



5.13. irgc15b120kb.pdf Size:25K _igbt_a

IRGC16B60KB

PD - 93866A IRGC15B120KB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • Low VCE(on) VCE(on) typ.=2.46V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Eff

5.14. irgc15b120ub.pdf Size:28K _igbt_a

IRGC16B60KB

查询IRGC15B120UB供应商 PD - 93865A IRGC15B120UB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • UltraFast VCE(on) typ.=3.67V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Ra

5.15. irgc100b120ub.pdf Size:94K _igbt_a

IRGC16B60KB IRGC16B60KB

PD - 93873B IRGC100B120UB Die in Wafer Form 1200V Features C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A • Low VCE(on) VCE(on) typ.= 3.1V @ • 10µs Short Circuit Capability IC(nom) @ 25°C • Square RBSOA • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated E • Benchmark Efficiency above 20KHz 150mm Wafer •

Datasheet: IGC70T120T6RL , IRGC100B120KB , IRGC100B120UB , IRGC100B60KB , IRGC100B60UB , IRGC15B120KB , IRGC15B120UB , IRGC16B120KB , IKW40N120H3 , GT50JR22 , RJP30H2A , , , , , , .

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IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

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