IRGC16B60KB IGBT. Datasheet pdf. Equivalent
Type Designator: IRGC16B60KB
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.35
Maximum Collector Current |Ic|, A: 15
Package: CHIP
IRGC16B60KB Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGC16B60KB IGBT. Datasheet pdf. Equivalent
Type Designator: IRGC16B60KB
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 1.35
Maximum Collector Current |Ic|, A: 15
Package: CHIP
IRGC16B60KB Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGC16B60KB Datasheet (PDF)
1.1. irgc16b60kb.pdf 
Size:45K _igbt_a
PD - 94657 IRGC16B60KB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 15A • Low VCE(on) VCE(on) typ.=1.8V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Control Applications E 1
3.1. irgc16b120kb.pdf Size:44K _igbt_a
PD - 94562 IRGC16B120KB Die in Wafer Form Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • Low VCE(on) VCE(on) typ.=2.55V@ • 10µs Short Circuit Capability IC(nom) @ 25°C • Square RBSOA • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Control Applications E 1
5.1. irgc10b60kb.pdf Size:15K _international_rectifier
PD - 94409 IRGC10B60KB Die in Wafer Form Features Features Features Features Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 10A Low VCE(on) VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Co
5.2. irgc100b120k.pdf Size:15K _international_rectifier
PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Mot
5.3. irgc15b60kb.pdf Size:15K _international_rectifier
PD - 94410 IRGC15B60KB Die in Wafer Form Features Features Features Features Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 15A Low VCE(on) VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Co
5.4. irgc100b120u.pdf Size:15K _international_rectifier
PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A Low VCE(on) VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor C
5.5. irgc100b120kb.pdf Size:43K _international_rectifier
5.6. irgc14c40lb.pdf Size:17K _international_rectifier
PD - 94060 IRGC14C40LB Ignition IGBT IRGC14C40LC IRGC14C40LD Die in Wafer Form IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features NOTES: 1) Part number IRGC14C40LB are die in wafer form probed and uncut; IRGC14C40LC are die on film probed and Most Rugged in Industry cut; and IRGC14C40LD are probed die in wafle pack. 2) Refer- Logic-Level Gate Drive ence packaged parts
5.7. irgc15b120kb.pdf Size:26K _international_rectifier
PD - 93866A IRGC15B120KB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)=15A Low VCE(on) VCE(on) typ.=2.46V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor
5.8. irgc15b120ub.pdf Size:28K _international_rectifier
PD - 93865A IRGC15B120UB Die in Wafer Form Features Features Features Features Features 1200V C GEN5 Non Punch Through (NPT) Technology IC(nom)=15A UltraFast VCE(on) typ.=3.67V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated Benchmark Efficiency above 20KHz E
5.9. irgc100b120ub.pdf Size:43K _international_rectifier
5.10. irgc100b60ub.pdf Size:34K _igbt_a
PD - 94716 IRGC100B60UB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=100A • Low VCE(on) VCE(on) typ. = 2.8V • 10µs Short Circuit Capability • Square RBSOA @ IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UPS IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for UPS and Welding Applications E 150mm Waf
5.11. irgc100b60kb.pdf Size:79K _igbt_a
PD - 94618A IRGC100B60KB Die in Wafer Form Features 600V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=100A • Low VCE(on) VCE(on) typ.=1.9V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Efficiency for Motor Control Applications E
5.12. irgc100b120kb.pdf Size:43K _igbt_a
5.13. irgc15b120kb.pdf Size:25K _igbt_a
PD - 93866A IRGC15B120KB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • Low VCE(on) VCE(on) typ.=2.46V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated • Benchmark Eff
5.14. irgc15b120ub.pdf Size:28K _igbt_a
查询IRGC15B120UB供应商 PD - 93865A IRGC15B120UB Die in Wafer Form Features Features Features Features Features 1200V C • GEN5 Non Punch Through (NPT) Technology IC(nom)=15A • UltraFast VCE(on) typ.=3.67V @ • 10µs Short Circuit Capability • Square RBSOA IC(nom) @ 25°C • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Ra
5.15. irgc100b120ub.pdf Size:94K _igbt_a
PD - 93873B IRGC100B120UB Die in Wafer Form 1200V Features C • GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A • Low VCE(on) VCE(on) typ.= 3.1V @ • 10µs Short Circuit Capability IC(nom) @ 25°C • Square RBSOA • Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated E • Benchmark Efficiency above 20KHz 150mm Wafer •
Datasheet: IGC70T120T6RL , IRGC100B120KB , IRGC100B120UB , IRGC100B60KB , IRGC100B60UB , IRGC15B120KB , IRGC15B120UB , IRGC16B120KB , IKW40N120H3 , GT50JR22 , RJP30H2A , FGA60N65SMD , FGA6065ADF , FGA6560WDF , FGH30S130P , GT40WR21 , FGM603 .
