FGA6560WDF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGA6560WDF 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 306 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
trⓘ - Tiempo de subida, typ: 67.2 nS
Coesⓘ - Capacitancia de salida, typ: 82 pF
Encapsulados: TO-3PN
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FGA6560WDF datasheet
fga6560wdf.pdf
January 2015 FGA6560WDF 650 V, 60 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ =175oC Using novel field stop IGBT technology, Fairchild s new series of field stop 3rd generation IGBTs offer the optimum performance Positive Temperaure Co-efficient for Easy Parallel Operating for Welder applications where low conduction and switching
fga6530wdf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fga6540wdf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRGC15B120KB, IRGC15B120UB, IRGC16B120KB, IRGC16B60KB, GT50JR22, RJP30H2A, FGA60N65SMD, FGA6065ADF, SGT40N60FD2PT, FGH30S130P, GT40WR21, FGM603, FGT312, FGT313, FGT412, FGT612, 2PG001
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