IKW30N65WR5 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW30N65WR5
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 185 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 35 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW30N65WR5 IGBT
IKW30N65WR5 datasheet
ikw30n65wr5 k30ewr5.pdf
Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW30N65WR5 Data sheet Inductrial Power Control IKW30N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior
ikw30n65wr5.pdf
Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW30N65WR5 Data sheet Inductrial Power Control IKW30N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior
ikw30n65h5.pdf
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW30N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKW30N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode
ikw30n65nl5.pdf
IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2 CE(sat) fast and soft antiparallel diode IKW30N65NL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKW30N65NL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2 CE(sat) fast and soft antiparallel diode C Fe
Otros transistores... FGH30S130P , GT40WR21 , FGM603 , FGT312 , FGT313 , FGT412 , FGT612 , 2PG001 , BT60T60ANFK , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sa640 | 2sb527 | 30g124 | 75339p mosfet | a968 transistor | f1010e mosfet | 2sc3883 | c3306 datasheet






