IKW30N65WR5 Datasheet and Replacement
Type Designator: IKW30N65WR5
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 185 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 35 pF
Package: TO247
IKW30N65WR5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW30N65WR5 Datasheet (PDF)
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Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW30N65WR5 Data sheet Inductrial Power Control IKW30N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior... See More ⇒
ikw30n65wr5.pdf
Reverse Conducting Series Reverse conducting IGBT with monolithic body diode IKW30N65WR5 Data sheet Inductrial Power Control IKW30N65WR5 Reverse Conducting Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers - high ruggedness, temperature stable behavior... See More ⇒
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Datasheet: FGH30S130P , GT40WR21 , FGM603 , FGT312 , FGT313 , FGT412 , FGT612 , 2PG001 , BT60T60ANFK , MGD633 , GT20D201 , MBQ40T120FES , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N .
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