AOB15B65M1 Todos los transistores

 ..1. Size:556K  aosemi
 aot15b65m1 aob15b65m1.pdf

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 ..2. Size:1166K  aosemi
 aob15b65m1.pdf

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 5.1. Size:654K  aosemi
 aob15b65mq1.pdf

AOT15B65MQ1/AOB15B65MQ1 TM 650V, 15A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables hig

 7.1. Size:675K  aosemi
 aob15b60d.pdf

AOB15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

 9.1. Size:302K  aosemi
 aob15s65l.pdf

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced MOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 17.2nC By provid

 9.2. Size:302K  aosemi
 aob15s65.pdf

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced MOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 17.2nC By provid

 9.3. Size:343K  aosemi
 aob15s60l.pdf

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

 9.4. Size:343K  aosemi
 aob15s60.pdf

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

 9.5. Size:644K  aosemi
 aot15s65l aob15s65l aotf15s65l aotf15s65.pdf

AOT15S65L/AOB15S65L/AOTF15S65L/AOTF15S65 TM 650V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65L & AOB15S65L & AOTF15S65L & AOTF15S65 have been fabricated using the advanced IDM 60A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.29W levels of performance and robustness in switching Qg,typ 17.2nC applicati

 9.6. Size:557K  aosemi
 aot15s60l aob15s60l aotf15s60l aotf15s60.pdf

AOT15S60L/AOB15S60L/AOTF15S60L/AOTF15S60 TM 600V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60L & AOB15S60L & AOTF15S60L & AOTF15S60 IDM 63A have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance RDS(ON),max 0.29W and robustness in switching applications. Qg,typ 16n

 9.7. Size:343K  aosemi
 aot15s60 aob15s60 aotf15s60.pdf

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing

 9.8. Size:253K  inchange semiconductor
 aob15s65.pdf

isc N-Channel MOSFET Transistor AOB15S65 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.9. Size:253K  inchange semiconductor
 aob15s60l.pdf

isc N-Channel MOSFET Transistor AOB15S60L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.10. Size:253K  inchange semiconductor
 aob15s60.pdf

isc N-Channel MOSFET Transistor AOB15S60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp