AOB15B65M1
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AOB15B65M1
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 214
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 650
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
30
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
1.7
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 5.1
V
Tjⓘ - Максимальная температура перехода:
175
℃
trⓘ -
Время нарастания типовое: 18
nS
Coesⓘ - Выходная емкость, типовая: 96
pF
Qgⓘ - Общий заряд затвора, typ: 32
nC
Тип корпуса:
TO263
Аналог (замена) для AOB15B65M1
AOB15B65M1
Datasheet (PDF)
..1. Size:556K aosemi
aot15b65m1 aob15b65m1.pdf 
AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff
..2. Size:1166K aosemi
aob15b65m1.pdf 
AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff
5.1. Size:654K aosemi
aob15b65mq1.pdf 
AOT15B65MQ1/AOB15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables hig
7.1. Size:675K aosemi
aob15b60d.pdf 
AOB15B60DTM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to
9.1. Size:302K aosemi
aob15s65l.pdf 
AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid
9.2. Size:302K aosemi
aob15s65.pdf 
AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid
9.3. Size:343K aosemi
aob15s60l.pdf 
AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing
9.4. Size:343K aosemi
aob15s60.pdf 
AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing
9.5. Size:253K inchange semiconductor
aob15s65.pdf 
isc N-Channel MOSFET Transistor AOB15S65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.6. Size:253K inchange semiconductor
aob15s60l.pdf 
isc N-Channel MOSFET Transistor AOB15S60LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
9.7. Size:253K inchange semiconductor
aob15s60.pdf 
isc N-Channel MOSFET Transistor AOB15S60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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