IHW20N120R2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW20N120R2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 330 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

Coesⓘ - Capacitancia de salida, typ: 59 pF

Encapsulados: TO247

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IHW20N120R2 datasheet

 ..1. Size:551K  infineon
 ihw20n120r2 h20r1202.pdf pdf_icon

IHW20N120R2

H20R1202 H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - hig

 4.1. Size:794K  infineon
 ihw20n120r3 rev2 5g.pdf pdf_icon

IHW20N120R2

IHW20N120R3 IH-series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R - 0.48 K/W junction - case Diode thermal resistance, R - 0.48 K/W junction - case Thermal resistance R - 40 K/W junction - ambient Electrical Characteristic, at T = 25 C, unless otherwise specified Electrical Characteristic, at T = 25 C, unless otherwi

 4.2. Size:1861K  infineon
 ihw20n120r3.pdf pdf_icon

IHW20N120R2

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight

 4.3. Size:1903K  infineon
 ihw20n120r5.pdf pdf_icon

IHW20N120R2

Resonant Switching Series Reverse Conducting IGBT with monolithic body diode IHW20N120R5 Data sheet Industrial Power Control IHW20N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distri

MOSTRAR MÁS

Otros transistores... FGH75T65UPD, STGB7NC60KD, STGF7NC60KD, STGP7NC60KD, AOT15B65M1, AOB15B65M1, GT60M104, FGB40N60SM, FGH60N60SMD, 1MBI100U4F-120L-50, 1MBI1200U4C-120, 1MBI1200U4C-170, 1MBI1200UE-330, 1MBI1500UE-330-02, 1MBI150NH-060, 1MBI150NK-060, 1MBI1600U4C-120