IHW20N120R2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW20N120R2

Código: H20R1202

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 330

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.55

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 175

Capacitancia de salida (Cc), pF: 59

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de IHW20N120R2 - IGBT

IHW20N120R2 Datasheet (PDF)

..1. ihw20n120r2 h20r1202.pdf Size:551K _infineon

H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig

4.1. ihw20n120r3 rev2 5g.pdf Size:794K _infineon

IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi

4.2. ihw20n120r5.pdf Size:1956K _infineon

Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N120R5Data sheetIndustrial Power ControlIHW20N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distri

 4.3. ihw20n120r3.pdf Size:2179K _infineon

Induction Heating SeriesReverse conducting IGBT with monolithic body diodeIHW20N120R3Data sheetIndustrial Power ControlIHW20N120R3Induction Heating SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers: - very tight

Otros transistores... FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT60M104 , FGB40N60SM , GT50JR22 , 1MBI100U4F-120L-50 , 1MBI1200U4C-120 , 1MBI1200U4C-170 , 1MBI1200UE-330 , 1MBI1500UE-330-02 , 1MBI150NH-060 , 1MBI150NK-060 , 1MBI1600U4C-120 .