IHW20N120R2 IGBT. Datasheet pdf. Equivalent
Type Designator: IHW20N120R2
Type: IGBT + Anti-Parallel Diode
Marking Code: H20R1202
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 330 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 59 pF
Qgⓘ - Total Gate Charge, typ: 143 nC
Package: TO247
IHW20N120R2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IHW20N120R2 Datasheet (PDF)
ihw20n120r2 h20r1202.pdf
H20R1202H20R1202 IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - hig
ihw20n120r3 rev2 5g.pdf
IHW20N120R3IH-seriesThermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,R - 0.48 K/Wjunction - caseDiode thermal resistance,R - 0.48 K/Wjunction - caseThermal resistanceR - 40 K/Wjunction - ambientElectrical Characteristic, at T = 25C, unless otherwise specifiedElectrical Characteristic, at T = 25C, unless otherwi
ihw20n120r3.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW20N120R3Data sheetIndustrial Power ControlIHW20N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight
ihw20n120r5.pdf
Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeIHW20N120R5Data sheetIndustrial Power ControlIHW20N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distri
Datasheet: FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT60M104 , FGB40N60SM , FGD4536 , 1MBI100U4F-120L-50 , 1MBI1200U4C-120 , 1MBI1200U4C-170 , 1MBI1200UE-330 , 1MBI1500UE-330-02 , 1MBI150NH-060 , 1MBI150NK-060 , 1MBI1600U4C-120 .
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