1MBI1200U4C-120 Todos los transistores

 

1MBI1200U4C-120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1MBI1200U4C-120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 7350 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 1600 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.08 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 500 nS
   Paquete / Cubierta: MODULE
 

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Principales características: 1MBI1200U4C-120

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1MBI1200U4C-120

1MBI1200U4C-120 IGBT Modules IGBT MODULE (U series) 1200V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unl

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1MBI1200U4C-120

1MBI1200U4C-170 IGBT Modules IGBT MODULE (U series) 1700V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unl

 5.1. Size:1027K  fuji
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1MBI1200U4C-120

Otros transistores... STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT60M104 , FGB40N60SM , IHW20N120R2 , 1MBI100U4F-120L-50 , FGD4536 , 1MBI1200U4C-170 , 1MBI1200UE-330 , 1MBI1500UE-330-02 , 1MBI150NH-060 , 1MBI150NK-060 , 1MBI1600U4C-120 , 1MBI1600U4C-170 , 1MBI200F-120 .

 

 
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