1MBI1200U4C-120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 1MBI1200U4C-120  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 7350 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1600 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.08 V @25℃

trⓘ - Tiempo de subida, typ: 500 nS

Encapsulados: MODULE

  📄📄 Copiar 

 Búsqueda de reemplazo de 1MBI1200U4C-120 IGBT

- Selecciónⓘ de transistores por parámetros

 

1MBI1200U4C-120 datasheet

 0.1. Size:398K  fuji
 1mbi1200u4c-120.pdf pdf_icon

1MBI1200U4C-120

1MBI1200U4C-120 IGBT Modules IGBT MODULE (U series) 1200V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unl

 1.1. Size:455K  fuji
 1mbi1200u4c-170.pdf pdf_icon

1MBI1200U4C-120

1MBI1200U4C-170 IGBT Modules IGBT MODULE (U series) 1700V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unl

 5.1. Size:1027K  fuji
 1mbi1200ue-330.pdf pdf_icon

1MBI1200U4C-120

MOSTRAR MÁS

Otros transistores... STGF7NC60KD, STGP7NC60KD, AOT15B65M1, AOB15B65M1, GT60M104, FGB40N60SM, IHW20N120R2, 1MBI100U4F-120L-50, FGD4536, 1MBI1200U4C-170, 1MBI1200UE-330, 1MBI1500UE-330-02, 1MBI150NH-060, 1MBI150NK-060, 1MBI1600U4C-120, 1MBI1600U4C-170, 1MBI200F-120