1MBI1200U4C-120 IGBT. Datasheet pdf. Equivalent
Type Designator: 1MBI1200U4C-120
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 7350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.08 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 500 nS
Package: MODULE
1MBI1200U4C-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
1MBI1200U4C-120 Datasheet (PDF)
1mbi1200u4c-120.pdf
1MBI1200U4C-120 IGBT ModulesIGBT MODULE (U series)1200V / 1200A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unl
1mbi1200u4c-170.pdf
1MBI1200U4C-170 IGBT ModulesIGBT MODULE (U series)1700V / 1200A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unl
1mbi1200ue-330.pdf
. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.byTARGETSPECIFICATION( TENTATIVE )Device Name : IGBT ModuleType Name : 1MBI1200UE-330Spec. No. :MT5F 21070Nov. 19 08 K.HaraguchiaNov. 19 08 T.Koga1S.IgarashiMT5F2107011REVISIONS
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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