1MBI600LN-060 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 1MBI600LN-060
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 2000 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 800 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de 1MBI600LN-060 - IGBT
1MBI600LN-060 Datasheet (PDF)
1mbi600v-120-50.pdf
http://www.fujielectric.com/products/semiconductor/1MBI600V-120-50 IGBT ModulesIGBT MODULE (V series)1200V / 600A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Charact
1mbi600u4b-120.pdf
. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.by IGBT MODULE 1MBI600U4B-120 MS5F 6062 S.MiyashitaMar. 09 05T.Miyasaka Y.SekiMar. 09 05 1MS5F606213K.Yamada 4 4 .
1mbi600u4-120.pdf
SPECIFICATIONIGBT MODULEDevice Name :1MBI600U4-120Type Name :MS5F 6040Spec. No. :S.MiyashitaFeb. 15 05T.Miyasaka Y.SekiFeb. 15 05 1MS5F604013K.YamadaH04-004-07bR e v i s e d R e c o r d sClassi- AppliedDate Ind. Content Drawn Checked Checked Approvedfication dateIssuedFeb.-15 -05 T.Miyasaka K.YamadaEnactment Y.Sekidate2MS5F604013H04-
1mbi600px-140.pdf
IGBT MODULE n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductancen Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supplyn Maximum Ratings and Characteristics n Equivalent Circuitn n
1mbi600px-120.pdf
IGBT MODULE n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductancen Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supplyn Maximum Ratings and Characteristics n Equivalent Circuitn n
1mbi600nn-060.pdf
IGBT MODULE ( N series ) n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (~3 Times Rated Current)n Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power
1mbi600np-060.pdf
IGBT MODULE ( N series ) n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (~3 Times Rated Current)n Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power
1mbi600s-120.pdf
. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.by . ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.by . ./ 8(017)200-56-46
Otros transistores... 1MBI400NA-120 , 1MBI400NN-120 , 1MBI400NP-120 , 1MBI400S-120 , 1MBI400U4-120 , 1MBI400V-120-50 , 1MBI50FE-060 , 1MBI50L-060 , NGD8201N , 1MBI600LP-060 , 1MBI600NN-060 , 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 , 1MBI600U4B-120 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2