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IRG4BC30FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC30FD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 1.80V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 17A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220AB

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IRG4BC30FD Datasheet (PDF)

1.1. irg4bc30fd.pdf Size:412K _international_rectifier

IRG4BC30FD
IRG4BC30FD

PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and higher eff

1.2. irg4bc30f.pdf Size:167K _international_rectifier

IRG4BC30FD
IRG4BC30FD

D I I T I T D T I T I T Features C Features Features Features Features Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V

 1.3. irg4bc30fd-s.pdf Size:1260K _igbt_a

IRG4BC30FD
IRG4BC30FD

PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE VCES = 600V Features VCE(on) typ. = 1.59V • Fast: optimized for medium operating frequencies G (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter @VGE = 15V, IC = 17A E parameter distribution and higher efficiency than Generation

1.4. irg4bc30fd.pdf Size:302K _igbt_a

IRG4BC30FD
IRG4BC30FD

PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V • Generation 4 IGBT design provides tighter G parameter distribution and hig

 1.5. irg4bc30f.pdf Size:172K _igbt_a

IRG4BC30FD
IRG4BC30FD

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VG

Otros transistores... IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRG4BC20UD , IRG4BC20W , IRG4BC30F , IKW40T120 , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W .

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