2MBI50N-120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2MBI50N-120
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 250 nS
Coesⓘ - Capacitancia de salida, typ: 2900 pF
Paquete / Cubierta: MODULE
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2MBI50N-120 Datasheet (PDF)
2mbi50n-120.pdf
IGBT MODULE ( N series ) n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (4~5 Times Rated Current)n Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power
2mbi50n-060.pdf
IGBT MODULE ( N series ) n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (~3 Times Rated Current)n Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power
2mbi50j-060.pdf
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Otros transistores... 2MBI450VJ-120-50 , 2MBI450VN-120-50 , 2MBI450VN-170-50 , 2MBI50F-120 , 2MBI50J-060 , 2MBI50L-060 , 2MBI50L-120 , 2MBI50N-060 , NCE80TD65BT , 2MBI550VJ-170-50 , 2MBI550VN-170-50 , 2MBI600NT-060 , 2MBI600U2E-060 , 2MBI600U4G-120 , 2MBI600U4G-170 , 2MBI600VD-060-50 , 2MBI600VE-120-50 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2