2MBI550VJ-170-50 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2MBI550VJ-170-50
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 3750 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 750 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
trⓘ - Tiempo de subida, typ: 500 nS
Encapsulados: MODULE
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2MBI550VJ-170-50 datasheet
2mbi550vj-170-50.pdf
http //www.fujielectric.com/products/semiconductor/ 2MBI550VJ-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 550A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Charac
2mbi550vn-170-50.pdf
http //www.fujielectric.com/products/semiconductor/ 2MBI550VN-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 550A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Charac
2mbi50j-060.pdf
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Otros transistores... 2MBI450VN-120-50 , 2MBI450VN-170-50 , 2MBI50F-120 , 2MBI50J-060 , 2MBI50L-060 , 2MBI50L-120 , 2MBI50N-060 , 2MBI50N-120 , IKW40T120 , 2MBI550VN-170-50 , 2MBI600NT-060 , 2MBI600U2E-060 , 2MBI600U4G-120 , 2MBI600U4G-170 , 2MBI600VD-060-50 , 2MBI600VE-120-50 , 2MBI600VJ-120-50 .
History: SL15T65FK
History: SL15T65FK
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