2MBI550VJ-170-50 Datasheet and Replacement
Type Designator: 2MBI550VJ-170-50
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 3750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 750 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 500 nS
Package: MODULE
- IGBT Cross-Reference
2MBI550VJ-170-50 Datasheet (PDF)
2mbi550vj-170-50.pdf

http://www.fujielectric.com/products/semiconductor/2MBI550VJ-170-50 IGBT ModulesIGBT MODULE (V series)1700V / 550A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Charac
2mbi550vn-170-50.pdf

http://www.fujielectric.com/products/semiconductor/2MBI550VN-170-50 IGBT ModulesIGBT MODULE (V series)1700V / 550A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Charac
2mbi50j-060.pdf

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Datasheet: 2MBI450VN-120-50 , 2MBI450VN-170-50 , 2MBI50F-120 , 2MBI50J-060 , 2MBI50L-060 , 2MBI50L-120 , 2MBI50N-060 , 2MBI50N-120 , CRG75T60AK3HD , 2MBI550VN-170-50 , 2MBI600NT-060 , 2MBI600U2E-060 , 2MBI600U4G-120 , 2MBI600U4G-170 , 2MBI600VD-060-50 , 2MBI600VE-120-50 , 2MBI600VJ-120-50 .
History: RJH1CD6DPQ-A0 | NCE75ED120VTP | MMGT15H120XB6C | BSM50GD170DL | KE703A | IKP20N65H5 | 2N6977
Keywords - 2MBI550VJ-170-50 transistor datasheet
2MBI550VJ-170-50 cross reference
2MBI550VJ-170-50 equivalent finder
2MBI550VJ-170-50 lookup
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2MBI550VJ-170-50 replacement
History: RJH1CD6DPQ-A0 | NCE75ED120VTP | MMGT15H120XB6C | BSM50GD170DL | KE703A | IKP20N65H5 | 2N6977



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