2MBI800U4G-120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2MBI800U4G-120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 4800 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.12 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 650 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
2MBI800U4G-120 Datasheet (PDF)
2mbi800u4g-120.pdf

http://www.fujielectric.com/products/semiconductor/2MBI800U4G-120 IGBT ModulesIGBT MODULE (U series)1200V / 800A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characte
2mbi800u4g-170.pdf

2MBI800U4G-170 IGBT ModulesIGBT MODULE (U series)1700V / 800A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unles
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IRG7PH28UD1 | APT40GP90BG
History: IRG7PH28UD1 | APT40GP90BG



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