2MBI800U4G-120 PDF and Equivalents Search

 

2MBI800U4G-120 Specs and Replacement

Type Designator: 2MBI800U4G-120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4800 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.12 V @25℃

tr ⓘ - Rise Time, typ: 650 nS

Package: MODULE

 2MBI800U4G-120 Substitution

- IGBTⓘ Cross-Reference Search

 

2MBI800U4G-120 datasheet

 ..1. Size:308K  fuji
 2mbi800u4g-120.pdf pdf_icon

2MBI800U4G-120

http //www.fujielectric.com/products/semiconductor/ 2MBI800U4G-120 IGBT Modules IGBT MODULE (U series) 1200V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characte... See More ⇒

 2.1. Size:443K  fuji
 2mbi800u4g-170.pdf pdf_icon

2MBI800U4G-120

2MBI800U4G-170 IGBT Modules IGBT MODULE (U series) 1700V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unles... See More ⇒

Specs: 2MBI75L-060, 2MBI75L-120, 2MBI75N-060, 2MBI75N-120, 2MBI75P-140, 2MBI75S-120, 2MBI75U4A-120, 2MBI75VA-120-50, BT60T60ANFK, 2MBI800U4G-170, 2MBI900VXA-120P-50, 4MBI300VG-120R-50, 4MBI400VG-060R-50, 6MBI100F-060, 6MBI100U2B-060, 6MBI100VA-060-50, 6MBI100VA-120-50

Keywords - 2MBI800U4G-120 transistor spec

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