All IGBT. 2MBI800U4G-120 Datasheet

 

2MBI800U4G-120 Datasheet and Replacement


   Type Designator: 2MBI800U4G-120
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 4800 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.12 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 650 nS
   Package: MODULE
      - IGBT Cross-Reference

 

2MBI800U4G-120 Datasheet (PDF)

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 2mbi800u4g-120.pdf pdf_icon

2MBI800U4G-120

http://www.fujielectric.com/products/semiconductor/2MBI800U4G-120 IGBT ModulesIGBT MODULE (U series)1200V / 800A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characte

 2.1. Size:443K  fuji
 2mbi800u4g-170.pdf pdf_icon

2MBI800U4G-120

2MBI800U4G-170 IGBT ModulesIGBT MODULE (U series)1700V / 800A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unles

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - 2MBI800U4G-120 transistor datasheet

 2MBI800U4G-120 cross reference
 2MBI800U4G-120 equivalent finder
 2MBI800U4G-120 lookup
 2MBI800U4G-120 substitution
 2MBI800U4G-120 replacement

 

 
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