2MBI800U4G-120 IGBT. Datasheet pdf. Equivalent
Type Designator: 2MBI800U4G-120
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 4800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.12 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 650 nS
Package: MODULE
2MBI800U4G-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
2MBI800U4G-120 Datasheet (PDF)
2mbi800u4g-120.pdf
http://www.fujielectric.com/products/semiconductor/2MBI800U4G-120 IGBT ModulesIGBT MODULE (U series)1200V / 800A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characte
2mbi800u4g-170.pdf
2MBI800U4G-170 IGBT ModulesIGBT MODULE (U series)1700V / 800A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unles
Datasheet: 2MBI75L-060 , 2MBI75L-120 , 2MBI75N-060 , 2MBI75N-120 , 2MBI75P-140 , 2MBI75S-120 , 2MBI75U4A-120 , 2MBI75VA-120-50 , IRG7S313U , 2MBI800U4G-170 , 2MBI900VXA-120P-50 , 4MBI300VG-120R-50 , 4MBI400VG-060R-50 , 6MBI100F-060 , 6MBI100U2B-060 , 6MBI100VA-060-50 , 6MBI100VA-120-50 .
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