IRG4BC30S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4BC30S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 34 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
trⓘ - Tiempo de subida, typ: 18 nS
Coesⓘ - Capacitancia de salida, typ: 72 pF
Encapsulados: TO220AB
Búsqueda de reemplazo de IRG4BC30S IGBT
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IRG4BC30S datasheet
irg4bc30s.pdf
D I I T I T D T I T I T Features C Features Features Features Features Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (
irg4bc30s-s.pdf
PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard optimized for minimum saturation VCES = 600V voltage and low operating frequencies (
auirg4bc30s-s.pdf
AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Standard optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (
auirg4bc30s-s auirg4bc30s-sl.pdf
AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Standard optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (
Otros transistores... IRG4BC20UD , IRG4BC20W , IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , TGD30N40P , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U .
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