IRG4BC30S Datasheet and Replacement
Type Designator: IRG4BC30S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 34 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 72 pF
Package: TO220AB
- IGBT Cross-Reference
IRG4BC30S Datasheet (PDF)
irg4bc30s.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
irg4bc30s-s.pdf
PD - 94069IRG4BC30S-SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
auirg4bc30s-s.pdf
AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (
auirg4bc30s-s auirg4bc30s-sl.pdf
AUTOMOTIVE GRADEPD - 96340AUIRG4BC30S-SAUIRG4BC30S-SLStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Standard: optimized for minimum saturationVCE(on) typ. = 1.4VGvoltage and low operating frequencies (
Datasheet: IRG4BC20UD , IRG4BC20W , IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , MBQ40T65FDSC , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U .
History: IXXH100N60B3
Keywords - IRG4BC30S transistor datasheet
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History: IXXH100N60B3
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