All IGBT. IRG4BC40K Datasheet

 

IRG4BC40K IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4BC40K

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 160W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.6V

Maximum Collector Current |Ic|, A: 25A

Maximum Junction Temperature (Tj), °C: 150

Package: TO220AB

IRG4BC40K Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC40K 说明书

1.1. irg4bc40k.pdf Size:156K _international_rectifier

IRG4BC40K
IRG4BC40K

D I Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features Short Circuit Rated UltraFast: optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiency G than Generation 3

1.2. irg4bc40k.pdf Size:160K _igbt_a

IRG4BC40K
IRG4BC40K

 D I Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features • Short Circuit Rated UltraFast: optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design provides higher efficiency G than Gen

2.1. irg4bc40s.pdf Size:157K _international_rectifier

IRG4BC40K
IRG4BC40K

PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 Industry standard TO

2.2. irg4bc40u.pdf Size:169K _international_rectifier

IRG4BC40K
IRG4BC40K

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3 @VGE

2.3. irg4bc40w.pdf Size:129K _international_rectifier

IRG4BC40K
IRG4BC40K

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E

2.4. irg4bc40f.pdf Size:167K _international_rectifier

IRG4BC40K
IRG4BC40K

D I I T I T D T I T I T Features C Features Features Features Features Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V

2.5. irg4bc40ws.pdf Size:352K _igbt_a

IRG4BC40K
IRG4BC40K

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V • Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VG

2.6. irg4bc40wl.pdf Size:352K _igbt_a

IRG4BC40K
IRG4BC40K

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V • Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VG

2.7. irg4bc40s.pdf Size:162K _igbt_a

IRG4BC40K
IRG4BC40K

PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 • Industry st

2.8. irg4bc40u.pdf Size:175K _igbt_a

IRG4BC40K
IRG4BC40K

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation

2.9. irg4bc40w.pdf Size:132K _igbt_a

IRG4BC40K
IRG4BC40K

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

2.10. irg4bc40f.pdf Size:173K _igbt_a

IRG4BC40K
IRG4BC40K

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VG

Datasheet: IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IXGH40N60C2D1 , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD .

 


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