IRG4BC40K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IRG4BC40K
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 160 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 42 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 15 nS
Coesⓘ - Выходная емкость, типовая: 130 pF
Qgⓘ - Общий заряд затвора, typ: 120 nC
Тип корпуса: TO220AB
IRG4BC40K Datasheet (PDF)
irg4bc40k.pdf
D I Short Circuit RatedI T D T I T I T UltraFast IGBTCFeaturesFeaturesFeaturesFeaturesFeatures Short Circuit Rated UltraFast: optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiencyG than Gen
irg4bc40wl.pdf
PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VG
irg4bc40ws.pdf
PD - 95788BIRG4BC40WSPbFIRG4BC40WLPbFINSULATED GATE BIPOLAR TRANSISTORFeatures Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applicationsVCES = 600V Industry-benchmark switching losses improve efficiency of all power supply topologiesVCE(on) typ. = 2.05VG 50% reduction of Eoff parameter Low IGBT conduction losses@VG
irg4bc40s.pdf
PD - 91455BIRG4BC40SStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
irg4bc40u.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation
irg4bc40f.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency than Generation 3@VG
irg4bc40w.pdf
PD - 91654AIRG4BC40WINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.05VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC
irg4bc40u.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.72VG parameter distribution and higher efficiency than Generation
Другие IGBT... IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IKW40N65WR5 , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2